Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition
High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping - Zou - 2023 - Advanced Materials - Wiley Online Library
WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications - Cheng - 2020 - InfoMat - Wiley Online Library
WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications - Cheng - 2020 - InfoMat - Wiley Online Library
WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications - Cheng - 2020 - InfoMat - Wiley Online Library
Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling
Transferred via contacts as a platform for ideal two-dimensional transistors
Transferred via contacts as a platform for ideal two-dimensional transistors
Lateral WSe2 p–n Junction Device Electrically Controlled by a Single‐Gate Electrode - Kwak - 2019 - Advanced Optical Materials - Wiley Online Library
Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition
2D/2D Electrical Contacts in the Monolayer WSe2 Transistors: A First-Principles Study
Tungsten Diselenide (WSe2)
Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition